Nonequilibrium magnetic polarization and spin currents controlled by gate voltage in a ferromagnetic single-electron transistor
Authors:
- Ireneusz Weymann,
- Józef Barnaś,
- J. Martinek
Abstract
Spin-dependent electronic transport in a single-electron transistor with ferromagnetic external electrodes and nonmagnetic central part (island) is analyzed theoretically in the sequential tunneling and cotunneling regimes. Nonequilibrium magnetic polarization of the island due to spin accumulation (spin splitting of the chemical potential) is taken into account. The accumulation takes place when the spin relaxation time on the island is sufficiently long. The crossover from slow to fast spin relaxation limits is also analyzed. Magnetic polarization of the island and spin polarization of the flowing current are examined as a function of the gate and transport voltages. © 2003 Plenum Publishing Corporation.
- Record ID
- UAM0223df7f452f4c4cbce927935d31c6ed
- Author
- Journal series
- Journal of Superconductivity and Novel Magnetism, ISSN 1557-1939
- Issue year
- 2003
- Vol
- 16
- Pages
- 225-228
- ASJC Classification
- ;
- Language
- (en) English
- Score (nominal)
- 0
- Score source
- journalList
- Publication indicators
- = 1; = 3; : 2003 = 0.369; : 2007 (2 years) = 0.425 - 2008 (5 years) =0.512
- Citation count
- 3
- Uniform Resource Identifier
- https://researchportal.amu.edu.pl/info/article/UAM0223df7f452f4c4cbce927935d31c6ed/
- URN
urn:amu-prod:UAM0223df7f452f4c4cbce927935d31c6ed
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or PerishOpening in a new tab system.