Magnetization damping in nanocrystalline yttrium iron garnet thin films grown on oxidized silicon
Authors:
- Adam Krysztofik,
- Sevgi Ozoǧlu,
- Luis Emerson Coy Romero
Abstract
In this letter, we report on the magnetic and structural properties of Y3Fe5O12 (YIG) thin films deposited on a thermally oxidized silicon substrate. Broadband ferromagnetic measurements allowed us to distinguish between intrinsic and extrinsic linewidth contributions, revealing relatively low values of the Gilbert damping parameter that is in the range of 10-20 × 10-4 for film thicknesses below 100 nm. However, the inhomogeneous linewidth broadening μ 0 ΔH0 remained larger than 30 mT as a result of structural defects. This could guide further development of YIG films integrated with silicon that exhibit low magnetic losses.
- Record ID
- UAM08cb3b15bf7441929c0ebdd3fb09cf66
- Author
- Journal series
- IEEE Magnetics Letters, ISSN 1949-307X
- Issue year
- 2021
- Vol
- 12
- Article number
- 7101605
- ASJC Classification
- DOI
- DOI:10.1109/LMAG.2021.3086454 Opening in a new tab
- Language
- eng (en) English
- Score (nominal)
- 70
- Score source
- journalList
- Score
- = 70.0, 10-02-2022, ArticleFromJournal
- Publication indicators
- = 1; = 0; = 1; : 2018 = 0.692; : 2019 (2 years) = 1.540 - 2019 (5 years) =1.539
- Citation count
- 2
Share
- Uniform Resource Identifier
- https://researchportal.amu.edu.pl/info/article/UAM08cb3b15bf7441929c0ebdd3fb09cf66/
- URN
urn:amu-prod:UAM08cb3b15bf7441929c0ebdd3fb09cf66
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or PerishOpening in a new tab system.