Ba termination of Ge(001) studied with STM
Authors:
- Wojciech Koczorowski,
- T. Grzela,
- M.W. Radny,
- S.R. Schofield,
- G. Capellini,
- R. Czajka,
- T. Schroeder,
- N.J. Curson
Abstract
We use controlled annealing to tune the interfacial properties of a sub-monolayer and monolayer coverages of Ba atoms deposited on Ge(001), enabling the generation of either of two fundamentally distinct interfacial phases, as revealed by scanning tunneling microscopy. Firstly we identify the two key structural phases associated with this adsorption system, namely on-top adsorption and surface alloy formation, by performing a deposition and annealing experiment at a coverage low enough (∼0.15 ML) that isolated Ba-related features can be individually resolved. Subsequently we investigate the monolayer coverage case, of interest for passivation schemes of future Ge based devices, for which we find that the thermal evaporation of Ba onto a Ge(001) surface at room temperature results in on-top adsorption. This separation (lack of intermixing) between Ba and Ge layers is retained through successive annealing steps to temperatures of 470, 570, 670 and 770 K although a gradual ordering of the Ba layer is observed at 570 K and above, accompanied by a decrease in Ba layer density. Annealing above 770 K produces the 2D surface alloy phase accompanied by strain relief through monolayer height trench formation. An annealing temperature of 1070 K sees a further change in surface morphology but retention of the 2D surface alloy characteristic. These results are discussed in view of their possible implications for future semiconductor integrated circuit technology.
- Record ID
- UAM3a5ed96e4bf34d98a5e63db52b9e7e8f
- Author
- Journal series
- Nanotechnology, ISSN 0957-4484
- Issue year
- 2015
- Vol
- 26
- ASJC Classification
- ; ; ; ; ;
- DOI
- DOI:10.1088/0957-4484/26/15/155701 Opening in a new tab
- Language
- (en) English
- Score (nominal)
- 35
- Score source
- journalList
- Score
- Publication indicators
- = 7; = 7; : 2015 = 1.035; : 2015 (2 years) = 3.573 - 2015 (5 years) =3.611
- Uniform Resource Identifier
- https://researchportal.amu.edu.pl/info/article/UAM3a5ed96e4bf34d98a5e63db52b9e7e8f/
- URN
urn:amu-prod:UAM3a5ed96e4bf34d98a5e63db52b9e7e8f
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or PerishOpening in a new tab system.