Spin-Momentum-Locking Inhomogeneities as a Source of Bilinear Magnetoresistance in Topological Insulators
Authors:
- Anna Dyrdał,
- Józef Barnaś,
- A. Fert
Abstract
A new mechanism of bilinear magnetoresistance (BMR) is proposed and studied theoretically within the minimal model describing surface electronic states in topological insulators. The BMR appears as a consequence of the second-order response to electric field, and depends linearly on both magnetic field and current (electric field). The mechanism is based on the interplay of current-induced spin polarization and scattering processes due to inhomogeneities of spin-momentum locking, that unavoidably appear as a result of structural defects in topological insulators. The proposed mechanism leads to the BMR even if the electronic band structure is isotropic (e.g., absence of hexagonal warping), and is shown to be dominant at lower Fermi energies. © 2020 American Physical Society.
- Record ID
- UAM3db830fabc5845619d4d4daa957b580e
- Author
- Journal series
- Physical Review Letters, ISSN 0031-9007, e-ISSN 1079-7114
- Issue year
- 2020
- Vol
- 124
- No
- 4
- Keywords in English
- Electric fields; Electric insulators; Magnetoresistance; Spin polarization; Topology, Electronic band structure; Inhomogeneities; Minimal model; New mechanisms; Scattering process; Second orders; Structural defect; Surface electronic state, Locks (fasteners), article; electric field; magnetic field; polarization
- ASJC Classification
- DOI
- DOI:10.1103/PhysRevLett.124.046802 Opening in a new tab
- URL
- https://www.scopus.com/inward/record.uri?eid=2-s2.0-85079552775&doi=10.1103%2fPhysRevLett.124.046802&partnerID=40&md5=c6cd8657442b012b98d836a10be683ec Opening in a new tab
- Language
- (en) English
- Score (nominal)
- 200
- Score source
- journalList
- Score
- = 200.0, 14-05-2022, ArticleFromJournal
- Publication indicators
- = 18; = 5; = 6; : 2017 = 2.464; : 2019 (2 years) = 8.385 - 2019 (5 years) =8.215
- Citation count
- 23
Share
- Uniform Resource Identifier
- https://researchportal.amu.edu.pl/info/article/UAM3db830fabc5845619d4d4daa957b580e/
- URN
urn:amu-prod:UAM3db830fabc5845619d4d4daa957b580e
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or PerishOpening in a new tab system.