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Tunnel magnetoresistance in planar junctions with ferromagnetic barriers
Authors:
- Maciej Piotr Wilczyński,
- Józef Barnaś,
- R. Świrkowicz
Abstract
Tunnel magnetoresistance (TMR) effect in double junctions with nonmagnetic electrodes and ferromagnetic barriers is analysed theoretically within the free-electron-like one-band model. The calculations are performed in the two limiting cases of electron tunneling: sequential and coherent. The influence of height and thickness of the barriers and position of the Fermi level on the TMR effect is discussed. The bias voltage dependence of TMR is also analysed.
- Record ID
- UAM4baaf8b96ac6404384e342d677261496
- Author
- Journal series
- Physica Status Solidi A - Applied Research, ISSN 0031-8965, e-ISSN 1521-396X
- Issue year
- 2003
- Vol
- 196
- Pages
- 109-112
- ASJC Classification
- ;
- DOI
- DOI:10.1002/pssa.200306365 Opening in a new tab
- Language
- (en) English
- Score (nominal)
- 0
- Score source
- journalList
- Publication indicators
- = 3; = 2; : 2006 (2 years) = 1.221 - 2007 (5 years) =1.116
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- Uniform Resource Identifier
- https://researchportal.amu.edu.pl/info/article/UAM4baaf8b96ac6404384e342d677261496/
- URN
urn:amu-prod:UAM4baaf8b96ac6404384e342d677261496
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