Hydrogen implantation effect on optical properties of GaAs doping superlattices
Authors:
- H.W. Kunert,
- D. Dale,
- M. Hayes,
- J. Malherbe,
- V. Kononenko,
- Józef Barnaś
Abstract
Experimental results on the response of GaAs doping superlattices to 1 MeV hydrogen implantation at the doses of 5 × 1016, 1 × 1017, and 5 × 1017 cm-2 are presented. The samples were studied by means of photoluminescence and inelastic light scattering spectroscopy. Several new optically stable transitions above the effective energy band were observed. Structural changes were monitored by Raman spectroscopy. Possible origin of the new transitions is discussed. An attempt is also made to determine character of the tunable behavior of the parameters in as-grown and treated superlattices.
- Record ID
- UAM5dda7144f0f64753be3c416678cd291d
- Author
- Journal series
- Crystal Research and Technology, ISSN 1521-4079, [0232-1300]
- Issue year
- 2003
- Vol
- 38
- Pages
- 344-350
- ASJC Classification
- ; ;
- Language
- (en) English
- Score (nominal)
- 0
- Score source
- journalList
- Publication indicators
- = 1; = 1; : 2003 = 0.676; : 2013 (2 years) = 1.164 - 2013 (5 years) =1.046
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- Uniform Resource Identifier
- https://researchportal.amu.edu.pl/info/article/UAM5dda7144f0f64753be3c416678cd291d/
- URN
urn:amu-prod:UAM5dda7144f0f64753be3c416678cd291d
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