Hydrogen implantation effect on optical properties of GaAs doping superlattices

Kunert, H.W.; Dale, D.; Hayes, M.; Malherbe, J.; Kononenko, V.; Barnaś, Józef

Hydrogen implantation effect on optical properties of GaAs doping superlattices

Authors:

H.W. Kunert,
D. Dale,
M. Hayes,
J. Malherbe,
V. Kononenko,
Józef Barnaś

Abstract

Experimental results on the response of GaAs doping superlattices to 1 MeV hydrogen implantation at the doses of 5 × 10¹⁶, 1 × 10¹⁷, and 5 × 10¹⁷ cm^-2 are presented. The samples were studied by means of photoluminescence and inelastic light scattering spectroscopy. Several new optically stable transitions above the effective energy band were observed. Structural changes were monitored by Raman spectroscopy. Possible origin of the new transitions is discussed. An attempt is also made to determine character of the tunable behavior of the parameters in as-grown and treated superlattices.

Record ID: UAM5dda7144f0f64753be3c416678cd291d
Author: H.W. Kunert H.W. Kunert,, External affiliation of publication: Universiteit van Pretoria, D. Dale D. Dale,, External affiliation of publication: Universiteit van Pretoria, M. Hayes M. Hayes,, External affiliation of publication: Universiteit van Pretoria, J. Malherbe J. Malherbe,, External affiliation of publication: Universiteit van Pretoria, V. Kononenko V. Kononenko,, External affiliation of publication: B. I. Stepanov Institute of Physics, Józef Barnaś Józef Barnaś,,
Journal series: Crystal Research and Technology, ISSN 1521-4079, [0232-1300]
Issue year: 2003
Vol: 38
Pages: 344-350
ASJC Classification: 3104 Condensed Matter Physics; 2500 General Materials Science; 1600 General Chemistry
Language: en English
Score (nominal): 20
Score source: journalList
Publication indicators: Scopus Citations = 1.000; Scopus SNIP: 2003 = 0.676; WoS Impact Factor: 2013 = 1.164 (2) - 2013=1.046 (5)

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Uniform Resource Identifier: https://researchportal.amu.edu.pl/info/article/UAM5dda7144f0f64753be3c416678cd291d/

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