Conductance enhancement of InAs/InP heterostructure nanowires by surface functionalization with oligo(phenylene vinylene)s
Authors:
- Muhammed Ihab Schukfeh,
- Kristian Storm,
- Ahmed Mahmoud,
- Roar R. Søndergaard,
- Anna Teresa Szwajca,
- Allan Hansen,
- Peter Hinze,
- Thomas Weimann,
- Sofia Fahlvik Svensson,
- Achyut Bora,
- Kimberly A. Dick,
- Claes Thelander,
- Frederik C. Krebs,
- Paolo Lugli,
- Lars Samuelson,
- Marc Tornow
Abstract
We have investigated the electronic transport through 3 μm long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I-V characteristic with significantly increased currents of up to 1 μA at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier. © 2013 American Chemical Society.
- Record ID
- UAM7950d626c1554602a5dc42ea815c76a5
- Author
- Journal series
- ACS Nano, ISSN 1936-0851
- Issue year
- 2013
- Vol
- 7
- Pages
- 4111-4118
- ASJC Classification
- ; ;
- DOI
- DOI:10.1021/nn400380g Opening in a new tab
- Language
- (en) English
- Score (nominal)
- 45
- Score source
- journalList
- Score
- Publication indicators
- = 17; = 16; : 2013 = 2.717; : 2013 (2 years) = 12.033 - 2013 (5 years) =13.774
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- Uniform Resource Identifier
- https://researchportal.amu.edu.pl/info/article/UAM7950d626c1554602a5dc42ea815c76a5/
- URN
urn:amu-prod:UAM7950d626c1554602a5dc42ea815c76a5
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or PerishOpening in a new tab system.