Interface roughness effects in the giant magnetoresistance in magnetic multilayers
Authors:
- Józef Barnaś,
- G. Palasantzas
Abstract
In-plane electronic transport in thin layered magnetic structures composed of two ferromagnetic films separated by a nonmagnetic spacer is analyzed theoretically in the Born approximation. Particular attention is paid to the role of interface roughness in the giant magnetoresistance (GMR) effect. The analysis applies to self-affine interfaces described by the k-correlation model. Our results show that GMR is sensitive to the roughness exponent H (0≤H≤1) in a manner that depends on spin asymmetries for bulk and interfacial scattering. The limit of low electron concentration is also considered. © 1997 American Institute of Physics.
- Record ID
- UAM8c4062cf4dde443f9db9ee1aafdecb08
- Author
- Journal series
- Journal of Applied Physics, ISSN 0021-8979
- Issue year
- 1997
- Vol
- 82
- Pages
- 3950-3956
- ASJC Classification
- DOI
- DOI:10.1063/1.365702 Opening in a new tab
- Language
- (en) English
- Score (nominal)
- 0
- Score source
- journalList
- Publication indicators
- = 35; = 38; : 1999 = 1.487; : 2006 (2 years) = 2.316 - 2007 (5 years) =2.380
Share
- Uniform Resource Identifier
- https://researchportal.amu.edu.pl/info/article/UAM8c4062cf4dde443f9db9ee1aafdecb08/
- URN
urn:amu-prod:UAM8c4062cf4dde443f9db9ee1aafdecb08
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or PerishOpening in a new tab system.