Spin and charge transport in double-junction Fe/MgO/GaAs/MgO/Fe heterostructures
Authors:
- S. Wolski,
- T. Szczepański,
- V.K. Dugaev,
- Józef Barnaś,
- B. Landgraf,
- T. Slobodskyy,
- W. Hansen
Abstract
We present theoretical and experimental results on tunneling current in single Fe/MgO/GaAs and double Fe/MgO/GaAs/MgO/Fe tunnel junctions. The charge and spin currents are calculated as a function of external voltage for different sets of parameters characterizing the semiconducting GaAs layer. Transport characteristics of a single Fe/MgO/GaAs junction reveal typical diode as well as spin diode features. The results of numerical calculations are compared with current-voltage characteristics measured experimentally for double tunnel junction structures, and a satisfactory agreement of the theoretical and experimental results has been achieved.
- Record ID
- UAMa972a17921f74dbdbc25f29ed05ae2e1
- Author
- Journal series
- Journal of Applied Physics, ISSN 0021-8979
- Issue year
- 2015
- Vol
- 117
- ASJC Classification
- DOI
- DOI:10.1063/1.4906397 Opening in a new tab
- Language
- (en) English
- Score (nominal)
- 35
- Score source
- journalList
- Score
- Publication indicators
- = 1; = 2; : 2015 = 1.063; : 2015 (2 years) = 2.101 - 2015 (5 years) =2.126
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- Uniform Resource Identifier
- https://researchportal.amu.edu.pl/info/article/UAMa972a17921f74dbdbc25f29ed05ae2e1/
- URN
urn:amu-prod:UAMa972a17921f74dbdbc25f29ed05ae2e1
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or PerishOpening in a new tab system.