Magnetoresistance of a semiconducting magnetic wire with a domain wall
Authors:
- V.K. Dugaev,
- Józef Barnaś,
- J. Berakdar,
- V. Ivanov,
- W. Dobrowolski,
- V.F. Mitin
Abstract
We investigate theoretically the influence of the spin-orbit interaction of Rashba type on the magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall. The domain wall is assumed sharp (on the scale of the Fermi wavelength of the charge carriers). It is shown that the magnetoresistance in such a case can be considerably large, which is in qualitative agreement with recent experimental observations. It is also shown that spin-orbit interaction may result in an increase of the magnetoresistance. The role of localization corrections is also briefly discussed. ©2005 The American Physical Society.
- Record ID
- UAMf17ac10513e748ff8ecc3db9768facfb
- Author
- Journal series
- Physical Review B, ISSN 1098-0121
- Issue year
- 2005
- Vol
- 71
- ASJC Classification
- ;
- DOI
- DOI:10.1103/PhysRevB.71.024430 Opening in a new tab
- Language
- (en) English
- Score (nominal)
- 0
- Score source
- journalList
- Publication indicators
- = 29; = 29; : 2005 = 1.156; : 2006 (2 years) = 3.107 - 2007 (5 years) =3.124
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- Uniform Resource Identifier
- https://researchportal.amu.edu.pl/info/article/UAMf17ac10513e748ff8ecc3db9768facfb/
- URN
urn:amu-prod:UAMf17ac10513e748ff8ecc3db9768facfb
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or PerishOpening in a new tab system.