Close-spaced sublimation of SnS absorber layers and SnS/CdS heterojunction solar cells with Mo and Ti back metal contacts
Authors:
- Andrii Voznyi,
- Volodymyr Kosyak,
- Yurii Yeromenko,
- Jan Keller,
- Astrida Bērziņa,
- Artem Shamardin,
- Igor Iatsunskyi,
- Igor Shpetnyi,
- Sergei Plotnikov,
- Anatoliy Opanasyuk
Abstract
Tin sulfide is a promising semiconductor candidate to replace the currently used absorber materials in thin film photovoltaic such as Cu(In,Ga)(S,Se)2 and CdTe devices, which use toxic and scarce elements. However, numerous challenges still remain to approach comparable efficiencies for SnS-based solar cells. In this report, we address the following: (i) impact of growth conditions on phase purity and crystal quality of SnS thin films deposited by close-spaced vacuum sublimation technique; (ii) based on optimized SnS growth conditions, we further fabricate tin sulfide solar cells using traditional CdS buffer and i-ZnO/ZnO:Al bilayers and investigate the impact of molybdenum and titanium back metal contacts on photovoltaic parameters of resulting devices; (iii) finally, using device simulations, we reveal the impact of minority carrier lifetime in the SnS absorber and recombination velocity at the SnS/CdS heterointerface on solar cell parameters, demonstrating that these are the main factors affecting the performance of SnS-based photovoltaic devices. © 2020 Elsevier B.V.
- Record ID
- UAMffbb8877505c48cb99bd85a3df591e09
- Author
- Journal series
- Thin Solid Films, ISSN 0040-6090
- Issue year
- 2020
- Vol
- 709
- Article number
- 138153
- Keywords in English
- Device simulation; Solar cells; Thin films, Close-spaced sublimation; Tin sulfide; Aluminum compounds; Cadmium sulfide; Cadmium telluride; Carrier lifetime; Gallium compounds; Heterojunctions; II-VI semiconductors; IV-VI semiconductors; Layered semiconductors; Molybdenum; Selenium compounds; Semiconducting cadmium telluride; Solar cells; Solar power generation; Sublimation; Thin film circuits; Thin films; Tin compounds; Toxic materials; Wide band gap semiconductors; Zinc oxide, Close spaced sublimation; Heterojunction solar cells; Minority carrier lifetimes; Photovoltaic devices; Photovoltaic parameters; Recombination velocity; Solar cell parameters; Vacuum sublimation, Sulfur compounds
- ASJC Classification
- ; ; ; ;
- DOI
- DOI:10.1016/j.tsf.2020.138153 Opening in a new tab
- URL
- https://www.scopus.com/inward/record.uri?eid=2-s2.0-85086066147&doi=10.1016%2fj.tsf.2020.138153&partnerID=40&md5=a0fa5533691078b6ffb7569df3c3ec45 Opening in a new tab
- Language
- (en) English
- Score (nominal)
- 70
- Score source
- journalList
- Score
- = 70.0, 11-02-2022, ArticleFromJournal
- Publication indicators
- = 2; = 1; : 2017 = 0.864; : 2019 (2 years) = 2.030 - 2019 (5 years) =1.884
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- Uniform Resource Identifier
- https://researchportal.amu.edu.pl/info/article/UAMffbb8877505c48cb99bd85a3df591e09/
- URN
urn:amu-prod:UAMffbb8877505c48cb99bd85a3df591e09
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or PerishOpening in a new tab system.